The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Feb. 07, 2006
Akira Muto, Haruna, JP;
Ichio Shimizu, Tamamura, JP;
Katsuo Arai, Takasaki, JP;
Hidemasa Kagii, Takasaki, JP;
Hiroshi Sato, Takasaki, JP;
Hiroyuki Nakamura, Maebashi, JP;
Takuya Nakajo, Numata, JP;
Keiichi Okawa, Takasaki, JP;
Masahiko Osaka, Yuki, JP;
Akira Muto, Haruna, JP;
Ichio Shimizu, Tamamura, JP;
Katsuo Arai, Takasaki, JP;
Hidemasa Kagii, Takasaki, JP;
Hiroshi Sato, Takasaki, JP;
Hiroyuki Nakamura, Maebashi, JP;
Takuya Nakajo, Numata, JP;
Keiichi Okawa, Takasaki, JP;
Masahiko Osaka, Yuki, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device in the form of a resin sealed semiconductor package is disclosed, wherein a gate terminal connected to a gate pad electrode formed on a surface of a semiconductor chip and a source terminal connected to a source pad electrode formed on the chip surface exposed to a back surface of a sealing resin portion, a first portion of a drain terminal connected to a back-surface drain electrode of the semiconductor chip is exposed to an upper surface of the sealing resin portion, and a second portion of the drain terminal formed integrally with the first portion of the drain terminal is exposed to the back surface of the sealing resin portion. When forming the sealing resin portion in such a semiconductor device, first the sealing resin portion is formed so as to also cover an upper surface of the first portion of the drain terminal and thereafter the upper surface side of the sealing resin portion is polished by liquid honing, thereby allowing the upper surface of the first portion of the drain terminal to be exposed on the upper surface of the sealing resin portion. Both heat dissipating property and production yield of the semiconductor device are improved.