The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Aug. 24, 2004
Ramkumar Subramanian, Sunnyvale, CA (US);
Scott A. Bell, San Jose, CA (US);
Todd P. Lukanc, San Jose, CA (US);
Marina V. Plat, San Jose, CA (US);
Uzodinma Okoroanyanwu, Sunnyvale, CA (US);
Hung-eil Kim, San Jose, CA (US);
Ramkumar Subramanian, Sunnyvale, CA (US);
Scott A. Bell, San Jose, CA (US);
Todd P. Lukanc, San Jose, CA (US);
Marina V. Plat, San Jose, CA (US);
Uzodinma Okoroanyanwu, Sunnyvale, CA (US);
Hung-Eil Kim, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
There is provided a method of making plurality of features in a first layer. A photoresist layer is formed over the first layer. Dense regions in the photoresist layer are exposed through a first mask under a first set of illumination conditions. Isolated regions in the photoresist layer are exposed through a second mask different from the first mask under a second set of illumination conditions different from the first set of illumination conditions. The exposed photoresist layer is patterned and then the first layer is patterned using the patterned photoresist layer as a mask.