Method for forming high reliability bump structure

Abstract

Methods for forming a bump on a semiconductor substrate, the substrate having a contact pad thereon, is provided. In one embodiment, the method comprises depositing a passivation layer over the substrate and the contact pad. The passivation layer is patterned and etched to form a plurality of openings in the passivation layer exposing portions of the contact pad. An under bump metallurgy (UBM) layer is deposited over the etched passivation layer and in the plurality of openings thereof to contact the contact pad. A photoresist layer is formed on the UBM layer and then patterned and etched to form at least one opening substantially overlying the contact pad. An electrically conductive material is deposited into the opening formed in the photoresist layer and overlying the UBM layer and aligned with the contact pad. A portion of the remaining photoresist layer is removed. The UBM layer is etched using the electrically conductive material as a mask. Thereafter, the electrically conductive material is reflowed to provide a bump on the semiconductor substrate.