The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7357138 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 15, 2008

Filed:

Nov. 26, 2003
Applicants:

Bing Ji, Allentown, PA (US);

Stephen Andrew Motika, Kutztown, PA (US);

Ronald Martin Pearlstein, Macungie, PA (US);

Eugene Joseph Karwacki, Jr., Orefield, PA (US);

Dingjun Wu, Macungie, PA (US);

Inventors:

Bing Ji, Allentown, PA (US);

Stephen Andrew Motika, Kutztown, PA (US);

Ronald Martin Pearlstein, Macungie, PA (US);

Eugene Joseph Karwacki, Jr., Orefield, PA (US);

Dingjun Wu, Macungie, PA (US);

Assignee:

Air Products and Chemicals, Inc., Allentown, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 9/00 (2006.01); B08B 6/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.

Published as:
US2004129671A1; KR20050050579A; TW200518178A; EP1538235A1; SG112101A1; JP2005175466A; CN1638028A; TWI267898B; KR100667723B1; SG135203A1; CN100372055C; US7357138B2;

Find Patent Forward Citations

Ji, Bing. (2008). Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials (U.S. Patent No. 7357138). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7357138

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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