The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2008

Filed:

Jun. 29, 2004
Applicants:

Duan-fu Stephen Hsu, Fremont, CA (US);

Armin Liebchen, Hayward, CA (US);

Inventors:

Duan-Fu Stephen Hsu, Fremont, CA (US);

Armin Liebchen, Hayward, CA (US);

Assignee:

ASML Masktools B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/42 (2006.01); G03B 27/54 (2006.01); G03B 27/32 (2006.01); G03C 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclose is a method, program product and apparatus for optimizing numerical aperture ('NA') and sigma of a lithographic system based on the target layout. A pitch or interval analysis is performed to identify the distribution of critical pitch over the design. Based on the pitch or interval analysis, a critical dense pitch is identified. NA, sigma-in, sigma-out parameters are optimized such that the critical feature will print with or without bias adjustment. For features other than the critical dense features, adjustments are made in accordance with OPC, and lithographic apparatus settings are further mutually optimized. Accordingly, lithographic apparatus settings may be optimized for any pattern concurrently with OPC.


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