The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2008
Filed:
May. 05, 2005
Markus Franciscus Antonius Eurlings, Tilburg, NL;
Thomas Laidig, Point Richmond, CA (US);
Uwe Hollerbach, Franklin, MA (US);
Markus Franciscus Antonius Eurlings, Tilburg, NL;
Thomas Laidig, Point Richmond, CA (US);
Uwe Hollerbach, Franklin, MA (US);
ASML Masktools B.V., Veldhoven, NL;
Abstract
Model Based Optical Proximity Correction (MOPC) biasing techniques may be utilized for optimizing a mask pattern. However, conventional MOPC techniques do not account for influence from neighboring features on a mask. This influence may be factored in the following manner—first, generating a predicted pattern from a target pattern and selecting a plurality of evaluation points at which biasing may be determined. Next, a set of multivariable equations are generated for each evaluation point, each equation representing influence of neighboring features on a mask. The equations are solved to determine that amount of bias at each evaluation point, and the mask is optimized accordingly. This process may be repeated until the mask pattern is further optimized.