The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Mar. 26, 2004
Jiong-ping LU, Richardson, TX (US);
Haowen Bu, Plano, TX (US);
Shaofeng Yu, Plano, TX (US);
Ping Jiang, Plano, TX (US);
Jiong-Ping Lu, Richardson, TX (US);
Haowen Bu, Plano, TX (US);
Shaofeng Yu, Plano, TX (US);
Ping Jiang, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing the semiconductor device (), among other possible steps, includes forming a polysilicon gate electrode over a substrate () and forming source/drain regions () in the substrate () proximate the polysilicon gate electrode. The method further includes forming a blocking layer () over the source/drain regions (), the blocking layer () comprising a metal silicide, and siliciding the polysilicon gate electrode to form a silicided gate electrode ().
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile