The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Jan. 20, 2006
Applicants:
Po-lun Cheng, Kaohsiung County, TW;
Li-wei Cheng, Hsinchu, TW;
Inventors:
Po-Lun Cheng, Kaohsiung County, TW;
Li-Wei Cheng, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a gate dielectric is described. A plasma treatment process is performed to form a dielectric structure on a substrate, wherein the dielectric structure having a graded dielectric constant value that decreases gradually in a direction toward the substrate.
Cheng, Po-Lun. (2008). Method of forming a gate dielectric layer (U.S. Patent No. 7335607). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7335607
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile