The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
Mar. 04, 2005
Chien-hsueh Shih, Taipei, TW;
Shih-wei Chou, Taipei, TW;
Hung-wen Su, Jhubei, TW;
Minghsing Tsai, Chu-Pei, TW;
Chien-Hsueh Shih, Taipei, TW;
Shih-Wei Chou, Taipei, TW;
Hung-Wen Su, Jhubei, TW;
Minghsing Tsai, Chu-Pei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a semiconductor device comprising: forming a gate dielectric layer over a channel region; forming a gate electrode on the gate dielectric layer; forming source/drain regions substantially aligned with respective edges of the gate electrode with the channel region therebetween; forming a thin metal layer on the source/drain regions; forming a metal alloy layer on the thin metal layer; and transforming the thin metal layer into a low resistance metal silicide.