The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Nov. 02, 2005
Douglas D. Coolbaugh, Highland, NY (US);
Alvin J. Joseph, Williston, VT (US);
Seong-dong Kim, Williston, VT (US);
Louis D. Lanzerotti, Burlington, VT (US);
Xuefeng Liu, South Burlington, VT (US);
Robert M. Rassel, Colchester, VT (US);
Douglas D. Coolbaugh, Highland, NY (US);
Alvin J. Joseph, Williston, VT (US);
Seong-dong Kim, Williston, VT (US);
Louis D. Lanzerotti, Burlington, VT (US);
Xuefeng Liu, South Burlington, VT (US);
Robert M. Rassel, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A structure comprises a single wafer with a first subcollector formed in a first region having a first thickness and a second subcollector formed in a second region having a second thickness, different from the first thickness. A method is also contemplated which includes providing a substrate including a first layer and forming a first doped region in the first layer. The method further includes forming a second layer on the first layer and forming a second doped region in the second layer. The second doped region is formed at a different depth than the first doped region. The method also includes forming a first reachthrough in the first layer and forming a second reachthrough in second layer to link the first reachthrough to the surface.