The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Jun. 28, 2005
Randall Culver, Boise, ID (US);
Terrence B. Mcdaniel, Boise, ID (US);
Hongmei Wang, Centreville, VA (US);
James L. Dale, Woodbridge, VA (US);
Richard H. Lane, Boise, ID (US);
Fred D. Fishburn, Woodbridge, VA (US);
Randall Culver, Boise, ID (US);
Terrence B. McDaniel, Boise, ID (US);
Hongmei Wang, Centreville, VA (US);
James L. Dale, Woodbridge, VA (US);
Richard H. Lane, Boise, ID (US);
Fred D. Fishburn, Woodbridge, VA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
An ion implanting method includes forming a pair of spaced and adjacent features projecting outwardly from a substrate. At least outermost portions of the pair of spaced features are laterally pulled away from one another with a patterned photoresist layer received over the features and which has an opening therein received intermediate the pair of spaced features. While such spaced features are laterally pulled, a species is ion implanted into substrate material which is received lower than the pair of spaced features. After the ion implanting, the patterned photoresist layer is removed from the substrate. Other aspects and implementations are contemplated.