The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2008

Filed:

Dec. 10, 2002
Applicants:

Tadahiro Ohmi, Sendai, JP;

Shigetoshi Sugawa, Sendai, JP;

Masaki Hirayama, Sendai, JP;

Inventors:

Tadahiro Ohmi, Sendai, JP;

Shigetoshi Sugawa, Sendai, JP;

Masaki Hirayama, Sendai, JP;

Assignees:

Tadahiro Ohmi, Miyagi, JP;

Tokyo Electron Limited, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a substrate processing apparatus, a control electrode () separates a process space (C) including a substrate to be processed and a plasma formation space (B) not including the substrate. The control electrode includes a conductive member formed in a processing vessel and having a plurality of apertures () for passing plasma. A surface of the control electrode is covered by an aluminum oxide or a conductive nitride. In the substrate processing apparatus, a gas containing He and Nis supplied into the processing vessel. In the plasma formation space, there is formed plasma under a condition in which atomic state nitrogen N* are excited. The atomic state nitrogen N* are used to nitride a surface of the substrate.


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