The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2008
Filed:
Jan. 05, 2007
Chien-hao Chen, Ilan, TW;
Vincent S. Chang, Hsinchu, TW;
Ji-yi Yang, Taoyuan County, TW;
Chia-lin Chen, Hsinchu, TW;
Tze-liang Lee, Hsinchu, TW;
Chien-Hao Chen, Ilan, TW;
Vincent S. Chang, Hsinchu, TW;
Ji-Yi Yang, Taoyuan County, TW;
Chia-Lin Chen, Hsinchu, TW;
Tze-Liang Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for forming a divot free nitride lined shallow trench isolation (STI) feature including providing a substrate including an STI trench extending through an uppermost hardmask layer into a thickness of the substrate exposing the substrate portions; selectively forming a first insulating layer lining the STI trench over said exposed substrate portions only; backfilling the STI trench with a second insulating layer; planarizing the second insulating layer; and, carrying out a wet etching process to remove the uppermost hardmask layer.