The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2008
Filed:
Jul. 22, 2005
Brett W. Busch, Boise, ID (US);
Luan C. Tran, Meridian, ID (US);
Ardavan Niroomand, Boise, ID (US);
Fred D. Fishburn, Boise, ID (US);
Richard D. Holscher, Boise, ID (US);
Brett W. Busch, Boise, ID (US);
Luan C. Tran, Meridian, ID (US);
Ardavan Niroomand, Boise, ID (US);
Fred D. Fishburn, Boise, ID (US);
Richard D. Holscher, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in the masking layer that is less than entirely through the masking layer. A second patterned photoresist is subsequently formed over the masking layer and utilized during a second etch into the masking layer. The combined first and second etches form openings extending entirely through the masking layer and thus form the masking layer into the patterned mask. The patterned mask can be utilized to form a pattern in a substrate underlying the mask. The pattern formed in the substrate can correspond to an array of capacitor container openings. Capacitor structure can be formed within the openings. The capacitor structures can be incorporated within a DRAM array.