The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2008
Filed:
Jul. 19, 2005
Keng-chu Lin, Ping-Tung, TW;
Chen-hua Yu, Hsin-Chu, TW;
Ching-ya Wang, Taipei, TW;
Chia-cheng Chou, Keelung, TW;
Tien-i Bao, Hsin-Chu, TW;
Shwang-ming Cheng, Hsin-Chu, TW;
Keng-Chu Lin, Ping-Tung, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Ching-Ya Wang, Taipei, TW;
Chia-Cheng Chou, Keelung, TW;
Tien-I Bao, Hsin-Chu, TW;
Shwang-Ming Cheng, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a low-k dielectric layer and forming a structure in the low-k dielectric layer includes depositing a low-k dielectric layer over a substrate, performing a first treatment to the low-k dielectric layer, performing post-formation processes, and performing a second treatment to the low-k dielectric layer. The k value of the low-k dielectric layer is lowered by the first treatment. The post-formation processes performed to the low-k dielectric layer include at least one low-k dielectric material damaging process. The second treatment restores the low-k dielectric layer. Preferably, each of the first and second treatments includes a curing process selected from e-beam curing, ultraviolet curing, plasma curing, SCCOcleaning, and combinations thereof.