The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
Jan. 03, 2006
Stephen M. Gates, Ossining, NY (US);
Alfred Grill, White Plains, NY (US);
David R. Medeiros, Ossining, NY (US);
Deborah Newmayer, Danbury, CT (US);
Son Van Nguyen, Yorktown Heights, NY (US);
Vishnubhai V. Patel, Yorktown Heights, NY (US);
Xinhui Wang, Poughkeepsie, NY (US);
Stephen M. Gates, Ossining, NY (US);
Alfred Grill, White Plains, NY (US);
David R. Medeiros, Ossining, NY (US);
Deborah Newmayer, Danbury, CT (US);
Son Van Nguyen, Yorktown Heights, NY (US);
Vishnubhai V. Patel, Yorktown Heights, NY (US);
Xinhui Wang, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for fabricating a thermally stable ultralow dielectric constant film including Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition ('PECVD') process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.