The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
Nov. 10, 2003
Chin-lung Lin, Hsin-Chu Hsien, TW;
Chuen Huei Yang, Taipei, TW;
Ming-jui Chen, Hsin-Chu, TW;
Venson Lee, Hsin-Chu, TW;
Chin-Lung Lin, Hsin-Chu Hsien, TW;
Chuen Huei Yang, Taipei, TW;
Ming-Jui Chen, Hsin-Chu, TW;
Venson Lee, Hsin-Chu, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A lithography method for forming a plurality of patterns in a photoresist layer. A phase shift mask including a plurality of transparent main features, a plurality of first phase shift transparent regions, and a plurality of second phase shift transparent regions is provided. Each transparent main feature is surrounded by the first phase shift transparent regions and the second phase shift transparent regions interlaced contiguously along a periphery of the transparent main feature. Each of the first phase shift transparent regions has a phase shift relative to each of the second phase shift transparent regions. An exposure process is performed to irradiate the phase shift mask with light so that the patterns corresponding to the transparent main features are formed in the photoresist layer.