The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Sep. 29, 2004
Kohei Kawamura, Yamanashi, JP;
Akira Asano, Yamanashi, JP;
Koutarou Miyatani, Yamanashi, JP;
Joseph T. Hillman, Scottsdale, AZ (US);
Bentley Palmer, Phoenix, AZ (US);
Kohei Kawamura, Yamanashi, JP;
Akira Asano, Yamanashi, JP;
Koutarou Miyatani, Yamanashi, JP;
Joseph T. Hillman, Scottsdale, AZ (US);
Bentley Palmer, Phoenix, AZ (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.