The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Dec. 10, 2004
Dureseti Chidambarrao, Weston, CT (US);
Ying LI, Newburgh, NY (US);
Rajeev Malik, Pleasantville, NY (US);
Shreesh Narasimha, Beacon, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
Ying Li, Newburgh, NY (US);
Rajeev Malik, Pleasantville, NY (US);
Shreesh Narasimha, Beacon, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a semiconductor device having dual nitride liners, a silicide layer, and a protective layer beneath one of the nitride liners for preventing the etching of the silicide layer. A first aspect of the invention provides a method for use in the manufacture of a semiconductor device comprising the steps of applying a protective layer to a device, applying a first silicon nitride liner to the device, removing a portion of the first silicon nitride liner, removing a portion of the protective layer, and applying a second silicon nitride liner to the device.