The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
Aug. 22, 2003
Kenneth S. Collins, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Kartik Ramaswamy, Santa Clara, CA (US);
Andrew Nguyen, San Jose, CA (US);
Amir Al-bayati, San Jose, CA (US);
Biagio Gallo, Los Gatos, CA (US);
Gonzalo Antonio Monroy, San Francisco, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Kartik Ramaswamy, Santa Clara, CA (US);
Andrew Nguyen, San Jose, CA (US);
Amir Al-Bayati, San Jose, CA (US);
Biagio Gallo, Los Gatos, CA (US);
Gonzalo Antonio Monroy, San Francisco, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas which includes the species to be implanted in the surface layer of the workpiece. The method further includes generating from the process gas a plasma by inductively coupling RF source power into the processing zone from an RF source power generator through an inductively coupled RF power applicator, and applying an RF bias from an RF bias generator to the workpiece support.