The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2007
Filed:
Nov. 29, 2004
Chung-i Chen, Hsinchu, TW;
Hsin Kuan, Hsinchu, TW;
Zhi-cheng Chen, Hsinchu, TW;
Rann-shyan Yeh, Hsin-Chu, TW;
Chi-hsuen Chang, Hsinchu, TW;
Jun Xiu Liu, Hsinchu, TW;
Tzu-chiang Sung, Jhubei, TW;
Chia-wei Liu, Huatan Township, TW;
Jieh-ting Cheng, Nantou, TW;
Chung-I Chen, Hsinchu, TW;
Hsin Kuan, Hsinchu, TW;
Zhi-Cheng Chen, Hsinchu, TW;
Rann-Shyan Yeh, Hsin-Chu, TW;
Chi-Hsuen Chang, Hsinchu, TW;
Jun Xiu Liu, Hsinchu, TW;
Tzu-Chiang Sung, Jhubei, TW;
Chia-Wei Liu, Huatan Township, TW;
Jieh-Ting Cheng, Nantou, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A high-voltage transistor device with an interlayer dielectric (ILD) etch stop layer for use in a subsequent contact hole process is provided. The etch stop layer is a high-resistivity film having a resistivity greater than 10 ohm-cm, thus leakage is prevented and breakdown voltage is improved when driving a high voltage greater than 5V at the gate site. A method for fabricating the high-voltage device is compatible with current low-voltage device processes and middle-voltage device processes.