The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2007
Filed:
Sep. 06, 2002
Applicants:
Akihito Toda, Nirasaki, JP;
Kazuto Ogawa, Nirasaki, JP;
Inventors:
Akihito Toda, Nirasaki, JP;
Kazuto Ogawa, Nirasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A processing method which, when an organic film layer such as a PR film layerformed on the surface of a wafer W is to be removed from an SiOfilm layerbelow it by generating plasma of a process gas in a chambercomprises the step of using Ogas as the process gas to remove the organic film layer at a first pressure, e.g., 20 mTorr, lower than in a conventional case, and the step of using the same Ogas to remove the organic film layer at a second pressure, e.g., 200 mTorr, higher than the first pressure.