The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2007

Filed:

Mar. 17, 2005
Applicants:

Chuang-ping Hou, YongKong, TW;

Syun-ming Jang, Hsin-Chu, TW;

Ying-ho Chen, Taipei, TW;

Chu-yun Fu, Taipei, TW;

Tung-ching Tseng, Taipei, TW;

Inventors:

Chuang-Ping Hou, YongKong, TW;

Syun-Ming Jang, Hsin-Chu, TW;

Ying-Ho Chen, Taipei, TW;

Chu-Yun Fu, Taipei, TW;

Tung-Ching Tseng, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming a semiconductor device utilizing a chemical-mechanical polishing (CMP) process is provided. In one example, the method includes sequentially performing a first CMP process for removing a first portion of an oxide surface of a semiconductor device using a high selectivity slurry (HSS) and a first polish pad, interrupting the first CMP process, cleaning the semiconductor device and the first polish pad, and performing a second CMP process for removing a second portion of the oxide surface.


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