The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2007
Filed:
Jul. 07, 2006
Kang Sub Yim, Santa Clara, CA (US);
Kelvin Chan, Santa Clara, CA (US);
Nagarajan Rajagopalan, Santa Clara, CA (US);
Josephine Ju-hwei Chang Liu, Boise, ID (US);
Sang H. Ahn, Santa Clara, CA (US);
Yi Zheng, San Jose, CA (US);
Sang IN Yi, Sunnyvale, CA (US);
VU Ngoc Tran Nguyen, Santa Clara, CA (US);
Alexandros T. Demos, Fremont, CA (US);
Kang Sub Yim, Santa Clara, CA (US);
Kelvin Chan, Santa Clara, CA (US);
Nagarajan Rajagopalan, Santa Clara, CA (US);
Josephine Ju-Hwei Chang Liu, Boise, ID (US);
Sang H. Ahn, Santa Clara, CA (US);
Yi Zheng, San Jose, CA (US);
Sang In Yi, Sunnyvale, CA (US);
Vu Ngoc Tran Nguyen, Santa Clara, CA (US);
Alexandros T. Demos, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an initiation gas mixture of a flow rate of one or more organosilicon compounds and a flow rate of one or more oxidizing gases to deposit an initiation layer by applying an RF power to the electrode. The organosilicon compound flow rate is then ramped-up to a final flow rate to deposit a first transition layer, upon which one or more porogen compounds is introduced and the flow rate porogen compound is ramped up to a final deposition rate while depositing a second transition layer. A porogen doped silicon oxide layer is then deposited by flowing the final porogen and organosilicon flow rates until the RF power is turned off.