The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
Nov. 21, 2002
Grant M. Kloster, Lake Oswego, OR (US);
Xiarong Morrow, Portland, OR (US);
Jihperng Leu, Portland, OR (US);
Grant M. Kloster, Lake Oswego, OR (US);
Xiarong Morrow, Portland, OR (US);
Jihperng Leu, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A low-k dielectric sacrificial material is formed within a microelectronic structure covered with a suitable porous or low density permeable material. At an appropriate time, the underlying sacrificial material is decomposed and diffused away through the overlying permeable material. As a result, at least one void is created, contributing to desirable dielectric characteristics.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile