The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
Jan. 03, 2003
Chim Seng Seet, Singapore, SG;
Bei Chao Zhang, Singapore, SG;
San Leong Liew, Singapore, SG;
John Sudijono, Singapore, SG;
Lai Lin Clare Yong, Singapore, SG;
Chim Seng Seet, Singapore, SG;
Bei Chao Zhang, Singapore, SG;
San Leong Liew, Singapore, SG;
John Sudijono, Singapore, SG;
Lai Lin Clare Yong, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A method of sputtering a Ta layer comprised of alpha phase Ta on a Cu layer. An embodiment includes a Ta sputter deposition on a Cu surface at a substrate temperature less than 200° C. Another embodiment has a pre-cooling step at a temperature less than 100° C. prior to Ta layer sputter deposition. In another non-limiting example embodiment, a pre-clean step comprising an inert gas sputter is performed prior to the tantalum sputter. Another non-limiting example embodiment provides a semiconductor structure comprising: a semiconductor structure; a copper layer over the semiconductor structure; a tantalum layer on the copper layer; the tantalum layer comprised alpha phase Ta; a metal layer on the tantalum layer.