The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2007
Filed:
Nov. 21, 2005
Kenneth S. Collins, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Kartik Ramaswamy, Santa Clara, CA (US);
Andrew Nguyen, San Jose, CA (US);
Amir Al-bayati, San Jose, CA (US);
Biagio Gallo, Los Gatos, CA (US);
Gonzalo Antonio Monroy, San Francisco, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Kartik Ramaswamy, Santa Clara, CA (US);
Andrew Nguyen, San Jose, CA (US);
Amir Al-Bayati, San Jose, CA (US);
Biagio Gallo, Los Gatos, CA (US);
Gonzalo Antonio Monroy, San Francisco, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking voltage to the electrostatic chuck. The method further includes introducing into the chamber a precursor gas including a species to be ion implanted in the workpiece and applying an RF bias to the electrostatic chuck, the RF bias having a bias level corresponding to the ion implantation profile depth.