The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7282415 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 16, 2007

Filed:

Mar. 29, 2005
Applicants:

Da Zhang, Austin, TX (US);

Bich-yen Nguyen, Austin, TX (US);

Voon-yew Thean, Austin, TX (US);

Yasuhito Shiho, Austin, TX (US);

Veer Dhandapani, Round Rock, TX (US);

Inventors:

Da Zhang, Austin, TX (US);

Bich-Yen Nguyen, Austin, TX (US);

Voon-Yew Thean, Austin, TX (US);

Yasuhito Shiho, Austin, TX (US);

Veer Dhandapani, Round Rock, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device with strain enhancement is formed by providing a semiconductor substrate and an overlying control electrode having a sidewall. An insulating layer is formed adjacent the sidewall of the control electrode. The semiconductor substrate and the control electrode are implanted to form first and second doped current electrode regions, a portion of each of the first and second doped current electrode regions being driven to underlie both the insulating layer and the control electrode in a channel region of the semiconductor device. The first and second doped current electrode regions are removed from the semiconductor substrate except for underneath the control electrode and the insulating layer to respectively form first and second trenches. An insitu doped material containing a different lattice constant relative to the semiconductor substrate is formed within the first and second trenches to function as first and second current electrodes of the semiconductor device.


Find Patent Forward Citations

Zhang, Da. (2007). Method for making a semiconductor device with strain enhancement (U.S. Patent No. 7282415). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7282415

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