The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2007
Filed:
Jun. 03, 2005
Annamalai Lakshmanan, Santa Clara, CA (US);
Daemian Raj, Sunnyvale, CA (US);
Francimar Schmitt, Santa Clara, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Ganesh Balasubramanian, Sunnyvale, CA (US);
Annamalai Lakshmanan, Santa Clara, CA (US);
Daemian Raj, Sunnyvale, CA (US);
Francimar Schmitt, Santa Clara, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Ganesh Balasubramanian, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited in the presence of low frequency RF power from a gas mixture including an organosilicon compound and an oxidizing gas. The low frequency RF power is terminated after the deposition of the low dielectric constant film. The oxide rich cap is deposited on the low dielectric constant film in the absence of low frequency RF power from another gas mixture including the organosilicon compound and the oxidizing gas used to deposit the low dielectric constant film.