The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2007
Filed:
Oct. 18, 2002
Xikun Wang, Sunnyvale, CA (US);
Hui Chen, San Jose, CA (US);
Anbei Jiang, Sunnyvale, CA (US);
Hong Shih, West Covina, CA (US);
Steve S. Y. Mak, Pleasanton, CA (US);
Xikun Wang, Sunnyvale, CA (US);
Hui Chen, San Jose, CA (US);
Anbei Jiang, Sunnyvale, CA (US);
Hong Shih, West Covina, CA (US);
Steve S. Y. Mak, Pleasanton, CA (US);
Appleid Materials, Inc, Santa Clara, CA (US);
Abstract
A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the aluminum, the process being preferably performed in a single plasma reactor. The ARC open uses either BCl/Clor Cland possibly a hydrocarbon passivating gas, preferably CH. The aluminum main etch preferably includes BCl/Cletch and CHdiluted with He. The dilution is particularly effective for small flow rates of CH. An over etch into the Ti/TiN barrier layer and part way into the underlying dielectric may use a chemistry similar to the main etch. A Cl/Ochamber cleaning may be performed, preferably with the wafer removed from the chamber and after every wafer cycle.