The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Apr. 29, 2005
Yun-ren Wang, Tai-Nan, TW;
Ying-wei Yen, Miao- Li Hsien, TW;
Chien-hua Lung, Hsin-Chu County, TW;
Kuo-tai Huang, Hsin-Chu, TW;
Yun-Ren Wang, Tai-Nan, TW;
Ying-Wei Yen, Miao- Li Hsien, TW;
Chien-Hua Lung, Hsin-Chu County, TW;
Kuo-Tai Huang, Hsin-Chu, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for fabricating a dielectric layer doped with nitrogen is provided according to the present invention. According to the method, a dielectric layer is formed on a semiconductor substrate. Two steps of nitridation processes are then performed on the dielectric layer. Following that, one step or two steps of annealing processes are performed on the dielectric layer. Dielectric layer formed by the method has uniform nitrogen dopant, and thus has fine electric properties.