The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Nov. 25, 2003
Ping-kun Wu, Chang-Hua, TW;
Horng-huei Tseng, Hsinchu, TW;
Chine-gie Lo, Hsinchu Hsien, TW;
Chao-hsiung Wang, Hsinchu, TW;
Shau-lin Shue, Hsinchu, TW;
Ping-Kun Wu, Chang-Hua, TW;
Horng-Huei Tseng, Hsinchu, TW;
Chine-Gie Lo, Hsinchu Hsien, TW;
Chao-Hsiung Wang, Hsinchu, TW;
Shau-Lin Shue, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A copper filled damascene structure and method for forming the same the method including providing a substrate comprising a semiconductor substrate; forming an insulator layer on the substrate; forming a damascene opening through a thickness portion of the insulator layer; forming a diffusion barrier layer to line the damascene opening; forming a first seed layer overlying the diffusion barrier; plasma treating the first seed layer in-situ with a first treatment plasma comprising plasma source gases selected from the group consisting of argon, nitrogen, hydrogen, and NH; forming a second seed layer overlying the first seed layer; forming a copper layer overlying the second seed layer according to an electro-chemical plating (ECP) process to fill the damascene opening; and, planarizing the copper layer to form a metal interconnect structure.