The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2007
Filed:
Mar. 15, 2005
Wei-shun Lai, Chang-Hua Hsien, TW;
Shu-hua HU, Tai-Chung, TW;
Kuan-jui Huang, Kao-Hsiung Hsien, TW;
Chin-chang Pan, Taipei Hsien, TW;
Yuan-chin Hsu, Chia-Yi Hsien, TW;
Wei-Shun Lai, Chang-Hua Hsien, TW;
Shu-Hua Hu, Tai-Chung, TW;
Kuan-Jui Huang, Kao-Hsiung Hsien, TW;
Chin-Chang Pan, Taipei Hsien, TW;
Yuan-Chin Hsu, Chia-Yi Hsien, TW;
Touch Micro-System Technology Inc., Yang-Mei, Taoyuan Hsien, TW;
Abstract
A substrate is provided. The substrate includes a plurality of devices disposed in the substrate, a plurality of contact pads disposed on a surface of the substrate and electrically connected to the devices, and a surface dielectric layer positioned on the surface of the substrate. Thereafter, a surface treatment process including at least a plasma etching process is performed. Subsequently, at least a plasma enhanced chemical vapor deposition (PECVD) process is performed to form a dielectric layer on a surface dielectric layer. The PECVD process is performed in a high frequency/low frequency alternating manner. Following that, a masking pattern on the dielectric layer is formed, and an anisotropic etching process is carried out to form a plurality of openings corresponding to the contact pads in the dielectric layer. The openings expose the contact pads, and each opening has an outwardly-inclined sidewall.