The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2007
Filed:
Sep. 22, 2005
Control system for multi-layer chemical mechanical polishing process and control method for the same
Ming-hsin Yeh, Jhongli, TW;
Cheng-chuan Lee, Fenyuan Township, Changhua County, TW;
Yi-ching Wu, Yong-an Township, Kaohsiung County, TW;
Chih-hsiang Hsiao, Hsinchu, TW;
Ming-Hsin Yeh, Jhongli, TW;
Cheng-Chuan Lee, Fenyuan Township, Changhua County, TW;
Yi-Ching Wu, Yong-an Township, Kaohsiung County, TW;
Chih-Hsiang Hsiao, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for controlling an apparatus to perform a multi-layer chemical mechanical polishing (CMP) process with a polishing rate for a plurality of process runs. For each process run, a multilayered structure with a first thickness formed on a wafer is polished and a second thickness of the multilayered structure is predetermined to be polished away. The method comprises steps of receiving a post-CMP thickness information of the multilayered structure of a first process run, wherein for the first process run, the CMP process is performed for a first CMP process time. Then, a second CMP process time is determined according to the first CMP process time, the first thickness and the post-CMP thickness. Further, the second CMP process time is provided to the apparatus for processing a second process run posterior to the first process run.