The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
Feb. 07, 2005
Chii-ming Wu, Taipei, TW;
Chih-wei Chang, Hsin-Chu, TW;
Shau-lin Shue, Hsinchu, TW;
Ju-wang Hsu, Taipei, TW;
Ming-huan Tsai, Hsinchu, TW;
Chii-Ming Wu, Taipei, TW;
Chih-Wei Chang, Hsin-Chu, TW;
Shau-Lin Shue, Hsinchu, TW;
Ju-Wang Hsu, Taipei, TW;
Ming-Huan Tsai, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method of manufacturing a semiconductor device is provided comprising the steps of: (a) forming a semiconductor element on a substrate, the semiconductor element having at least one nickel silicide contact region, a first etch stop layer formed over the element and an insulating layer formed over the first etch stop layer; (b) forming an opening through the insulating layer over the contact region at least to the first etch stop layer; (c) removing a portion of the first etch stop layer contacting a selected contact region using a process that does not substantially oxidize with the contact region, to form a contact opening to the contact region; and (d) filling the contact opening with conductive material to form a contact.