The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2007

Filed:

Jan. 23, 2004
Applicants:

Douglas D. Coolbaugh, Essex Junction, VT (US);

Stephen S. Furkay, South Burlington, VT (US);

Jeffrey B. Johnson, Essex Junction, VT (US);

Robert M. Rassel, Colchester, VT (US);

David C. Sheridan, Williston, VT (US);

Inventors:

Douglas D. Coolbaugh, Essex Junction, VT (US);

Stephen S. Furkay, South Burlington, VT (US);

Jeffrey B. Johnson, Essex Junction, VT (US);

Robert M. Rassel, Colchester, VT (US);

David C. Sheridan, Williston, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/8234 (2006.01); H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and device providing a HA junction varactor which may be fabricated with a reduced variation in C-V tuning curve from one varactor to the next. The process produces a varactor with an active region formed substantially by doping an Si substrate with various dopants at various energy levels. Accordingly, unit-to-unit device variation is reduced because etching, growing, and deposition processes to make the active portion of the varactor are reduced or eliminated. The resulting HA junction has a more uniform thickness, and a more uniform doping profile.


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