The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2007
Filed:
Aug. 02, 2002
Toshio Nakanishi, Amagasaki, JP;
Takuya Sugawara, Nirasaki, JP;
Seiji Matsuyama, Amagasaki, JP;
Masaru Sasaki, Amagasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Takuya Sugawara, Nirasaki, JP;
Seiji Matsuyama, Amagasaki, JP;
Masaru Sasaki, Amagasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of processing a for an electronic device, comprising, at least: a nitridation step (a) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a nitride film on the surface thereof; and a hydrogenation step (b) of supplying hydrogen radicals to the surface of the electronic device substrate. By use of this method, it is possible to recover the degradation in the electric property of an insulating film due to a turnaround phenomenon which can occur at the time of nitriding an Si substrate, etc.