The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2007

Filed:

Apr. 26, 2005
Applicants:

Gert Burbach, Dresden, DE;

Rolf Stephan, Dresden, DE;

Karsten Wieczorek, Dresden, DE;

Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;

Inventors:

Gert Burbach, Dresden, DE;

Rolf Stephan, Dresden, DE;

Karsten Wieczorek, Dresden, DE;

Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;

Assignee:

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor structure comprising a first transistor element and a second transistor element is provided. Stress in channel regions of the first and the second transistor element is controlled by forming stressed layers having a predetermined stress over the transistors. The stressed layers may be used as etch stop layers in the formation of contact vias through an interlayer dielectric formed over the transistors.


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