The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2007
Filed:
Jul. 16, 2004
Christoph Seuring, Burghausen, DE;
Robert Hölzl, Postmünster, DE;
Reinhold Wahlich, Tittmoning, DE;
Wilfried Von Ammon, Hochburg, AT;
Christoph Seuring, Burghausen, DE;
Robert Hölzl, Postmünster, DE;
Reinhold Wahlich, Tittmoning, DE;
Wilfried Von Ammon, Hochburg, AT;
Siltronic AG, Munich, DE;
Abstract
A process for producing a single-crystal silicon wafer, comprises the following steps: is satisfied, where [Oi] is an oxygen concentration in the silicon wafer, [Oi](T) is a limit solubility of oxygen in silicon at a temperature T, σis the surface energy of silicon dioxide, Ω is a volume of a precipitated oxygen atom, r is a mean COP radius and k the Boltzmann constant, with the silicon wafer, during the heat treatment, at least part of the time being exposed to an oxygen-containing atmosphere.