The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2007
Filed:
Aug. 29, 2006
Moris Kori, Palo Alto, CA (US);
Alfred W. Mak, Union City, CA (US);
Jeong Soo Byun, Cupertino, CA (US);
Lawrence Chung-lai Lei, Milpitas, CA (US);
Hua Chung, San Jose, CA (US);
Ashok Sinha, Palo Alto, CA (US);
Ming Xi, Milpitas, CA (US);
Moris Kori, Palo Alto, CA (US);
Alfred W. Mak, Union City, CA (US);
Jeong Soo Byun, Cupertino, CA (US);
Lawrence Chung-Lai Lei, Milpitas, CA (US);
Hua Chung, San Jose, CA (US);
Ashok Sinha, Palo Alto, CA (US);
Ming Xi, Milpitas, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to a first reducing gas and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method may further provide exposing the substrate to a deposition gas comprising a second reducing gas and the tungsten precursor gas to form a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples include that the ALD and CVD processes are conducted in the same deposition chamber or in different deposition chambers.