The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
Oct. 03, 2003
Tsai-sheng Gau, Hsin-Chu, TW;
Jaw-jung Shin, Hsin-Chu, TW;
Jan-wen You, Jhongli, TW;
Burn-jeng Lin, Hsin-Chu, TW;
Tsai-Sheng Gau, Hsin-Chu, TW;
Jaw-Jung Shin, Hsin-Chu, TW;
Jan-Wen You, Jhongli, TW;
Burn-Jeng Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for improving the critical dimension uniformity of a patterned feature on a wafer in semiconductor and mask fabrication is provided. In one embodiment, an evaluation means for evaluating the critical dimension distribution of a plurality of circuit layouts formed on the wafer, the plurality of circuit layouts defined by a mask is provided. A logic operation is performed on the plurality of circuit layouts to extract the patterned feature. The patterned feature is compared with design rules and if there is a deviation or difference between the patterned feature and the design rules, this difference is compensated for by adjusting photolithography adjustable parameters, such as, for example, mask-making.