The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
Nov. 16, 2004
Applicants:
Seiji Matsuyama, Kyoto, JP;
Takuya Sugawara, Nirasaki, JP;
Shigenori Ozaki, Amagasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Masaru Sasaki, Amagasaki, JP;
Inventors:
Seiji Matsuyama, Kyoto, JP;
Takuya Sugawara, Nirasaki, JP;
Shigenori Ozaki, Amagasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Masaru Sasaki, Amagasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna.