The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2007
Filed:
Aug. 06, 2004
Allen P. Mardian, Boise, ID (US);
Philip H. Campbell, Meridian, ID (US);
Craig M. Carpenter, Boise, ID (US);
Randy W. Mercil, Boise, ID (US);
Sujit Sharan, Chandler, AZ (US);
Allen P. Mardian, Boise, ID (US);
Philip H. Campbell, Meridian, ID (US);
Craig M. Carpenter, Boise, ID (US);
Randy W. Mercil, Boise, ID (US);
Sujit Sharan, Chandler, AZ (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods of chemical vapor deposition include providing a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. At least one process chemical inlet to the deposition chamber is included. A substrate is positioned within the chamber and a process gas is provided over the substrate effective to deposit material onto the substrate. While providing the process gas, a purge gas is emitted into the chamber from a plurality of purge gas inlets comprised by at least one chamber wall surface. The purge gas inlets are separate from the at least one process chemical inlet and the emitting forms an inert gas curtain over the chamber wall surface.