The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2007
Filed:
Nov. 12, 2004
Seiji Matsuyama, Kyoto, JP;
Takuya Sugawara, Nirasaki, JP;
Shigenori Ozaki, Amagasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Masaru Sasaki, Amagasaki, JP;
Seiji Matsuyama, Kyoto, JP;
Takuya Sugawara, Nirasaki, JP;
Shigenori Ozaki, Amagasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Masaru Sasaki, Amagasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A substrate processing method forming an oxynitride film by nitriding an oxide film formed on a silicon substrate includes a nitridation processing step that nitrides a surface of the oxide film by radicals or ions formed by exciting a nitrogen gas by microwave-excited plasma, the nitridation processing is conducted at a substrate temperature of 500° C. or less by setting an electron temperature of the microwave-excited plasma to 2 eV or less, and by setting the resident time of oxygen in the processing space in which the substrate to be processed is held, to two seconds or less.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile