The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2007
Filed:
Oct. 31, 2002
Aelan Mosden, Poughkeepsie, NY (US);
Sandra Hyland, Falls Church, VA (US);
Minori Kajimoto, Kanagawa, JP;
Aelan Mosden, Poughkeepsie, NY (US);
Sandra Hyland, Falls Church, VA (US);
Minori Kajimoto, Kanagawa, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A plasma processing system for and method of utilizing an improved etch chemistry for effectively etching high aspect ratio silicon features. The process chemistry employs precursor gases suitable for producing a fluorine/chlorine etch chemistry as well as precursor gases suitable for forming chemical bonds of sufficient strength to create stable feature side-walls. The improved process chemistries include SO/SF/SiCl, SO/SF/Cl, SO/SiF/SiCl, SOSIF/Cl, O/F/Cl, N2/Cl, and NO/F/Cl-based chemistries.