The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2007

Filed:

Mar. 05, 2004
Applicants:

Wei-shiau Chen, Chin-Men Hsien, TW;

Kao-su Huang, Hsinchu, TW;

Inventors:

Wei-Shiau Chen, Chin-Men Hsien, TW;

Kao-Su Huang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
Abstract

A fabrication method for a multi-layered thin film protective layer, which is applicable on a substrate having a peripheral circuit area and a pixel cell area, is described. Metal layers and pixel cells are formed on the peripheral circuit area and the pixel cell area, respectively. A first oxide layer, a silicon nitride layer and a second oxide layer are sequentially formed on the pixel cells and the metal layers. The second oxide layer is then patterned to define a pre-determined position of a pad spacer in the pixel cell area and the peripheral circuit area. The silicon nitride layer and the first oxide layer are further defined to form a first protective layer in the peripheral circuit area and to from a pad spacer in the pixel cell area exposing the pixel cells. A second protective layer is then formed on the exposed pixel cells.


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