The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2007

Filed:

Sep. 15, 2005
Applicants:

Heidi B. Cao, Portland, OR (US);

Wang Yueh, Portland, OR (US);

Jeanette M. Roberts, Portland, OR (US);

Inventors:

Heidi B. Cao, Portland, OR (US);

Wang Yueh, Portland, OR (US);

Jeanette M. Roberts, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/039 (2006.01); G03F 7/38 (2006.01); G03F 7/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

Numerous embodiments of a method to prevent outgassing from a low activation energy photoresist are described. In one embodiment of the present invention, a photoresist material is dispensed over a substrate to form a photoresist layer. The photoresist layer includes branched polymers coupled with acetal or ketal linkages. An exposed portion of the photoresist layer is exposed to a radiation treatment to cleave the acetal or ketal linkages and separate the branched polymers. The photoresist layer is baked at a temperature below about 100° C., and the separated branched polymers are too large to outgass from the photoresist layer.


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