The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2007
Filed:
May. 03, 2004
Hiroji Hanawa, Sunnyvale, CA (US);
Kartik Ramaswamy, Santa Clara, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Amir Al-bayati, San Jose, CA (US);
Biagio Gallo, Los Gatos, CA (US);
Andrew Nguyen, San Jose, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Kartik Ramaswamy, Santa Clara, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Amir Al-Bayati, San Jose, CA (US);
Biagio Gallo, Los Gatos, CA (US);
Andrew Nguyen, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A low temperature process for depositing a coating containing any of silicon, nitrogen, hydrogen or oxygen on a workpiece includes placing the workpiece in a reactor chamber facing a processing region of the chamber, introducing a process gas containing any of silicon, nitrogen, hydrogen or oxygen into the reactor chamber, generating a torroidal RF plasma current in a reentrant path through the processing region by applying RF plasma source power at an HF frequency on the order of about 10 MHz to a portion of a reentrant conduit external of the chamber and forming a portion of the reentrant path, applying RF plasma bias power at an LF frequency on the order of one or a few MHz to the workpiece, and maintaining the temperature of the workpiece under about 100 degrees C.