The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2007
Filed:
Jan. 18, 2005
Yi-chen Huang, Hsinchu, TW;
Chien Chung Fu, Sanchong, TW;
Ming-hong Hsieh, Bade, TW;
Hui Ouyang, Hsinchu, TW;
Yi-nien Su, Kaohsiung, TW;
Hun-jan Tao, HsinChu, TW;
Yi-Chen Huang, Hsinchu, TW;
Chien Chung Fu, Sanchong, TW;
Ming-Hong Hsieh, Bade, TW;
Hui Ouyang, Hsinchu, TW;
Yi-Nien Su, Kaohsiung, TW;
Hun-Jan Tao, HsinChu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
Via hole and trench structures and fabrication methods are disclosed. The structure comprises a conductive layer in a dielectric layer, and a via hole in the dielectric layer for exposing a portion of a surface of the conductive layer. A conductive liner covers the exposed surface of the first conductive layer. A trench is formed on the via hole in the dielectric without the conductive liner layer in the trench. Dual damascene structures and fabrications methods are also disclosed. Following the fabrication methods of the via hole and trench structures, a conductive layer is further formed in the via hole and trench structures.