The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2007
Filed:
Mar. 02, 2005
Takuya Sugawara, Nirasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Shigenori Ozaki, Amagasaki, JP;
Seiji Matsuyama, Nirasaki, JP;
Shigemi Murakawa, Minato-ku, JP;
Yoshihide Tada, Nirasaki, JP;
Takuya Sugawara, Nirasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Shigenori Ozaki, Amagasaki, JP;
Seiji Matsuyama, Nirasaki, JP;
Shigemi Murakawa, Minato-ku, JP;
Yoshihide Tada, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A process for producing an electronic device material of a high quality MOS-type semiconductor having an insulating layer and a semiconducting layer. The process includes a step of CVD-treating a substrate to be processed having single-crystal silicon as a main component to thereby form an insulating layer, and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots to thereby modify the insulating film by using the thus generated plasma.